PDF《TGF2929-FL》

106 C W Power-Added Efficiency at 3dB compression point, PAE3dB C 51.3 C % Gain at 3dB compression point, G3dB C 12.0 C dB Notes: 1. VD = +28?V, IDQ = 260?mA, Temp = +25?°C,

100 ?S, 20% RF Characterization C Mismatch Ruggedness at 3.5 GHz1 Symbol Parameter dB Compression Typical VSWR Impedance Mismatch Ruggedness

3 ?10:1 Notes: 1. Test conditions unless otherwise noted: TA =

25 °C, VD =

28 V, IDQ =

260 mA,

100 ?S PW, 20% DC 2. Driving input power is determined at pulsed compression under matched condition at EVB output connector. TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

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20 - www.qorvo.com Maximum Gate Current TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

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20 - www.qorvo.com 1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal and Reliability Information C Pulsed Parameter1 Conditions Values Units Thermal Resistance, IR (θJC)

85 °C back side temperature

100 W Pdiss,

1 mS PW, 5% DC 0.73 °C/W Peak IR Surface Temperature (TCH)

158 °C Thermal Resistance, IR (θJC)

85 °C back side temperature

100 W Pdiss,

1 mS PW, 10% DC 0.75 °C/W Peak IR Surface Temperature (TCH)

160 °C Thermal Resistance, IR (θJC)

85 °C back side temperature

100 W Pdiss,

1 mS PW, 20% DC 0.78 °C/W Peak IR Surface Temperature (TCH)

163 °C Thermal Resistance, IR (θJC)

85 °C back side temperature

100 W Pdiss,

1 mS PW, 25% DC 0.88 °C/W Peak IR Surface Temperature (TCH)

173 °C TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

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20 - www.qorvo.com 1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal and Reliability Information C CW Parameter1 Conditions Values Units Thermal Resistance, IR (θJC)

85 °C back side temperature 28.8 W Pdiss 1.08 °C/W Peak IR Surface Temperature (TCH)

116 °C Thermal Resistance, IR (θJC)

85 °C back side temperature 57.6 W Pdiss 1.15 °C/W Peak IR Surface Temperature (TCH)

151 °C Thermal Resistance, IR (θJC)

85 °C back side temperature 86.4 W Pdiss 1.20 °C/W Peak IR Surface Temperature (TCH)

189 °C Thermal Resistance, IR (θJC)

85 °C back side temperature

115 W Pdiss 1.28 °C/W Peak IR Surface Temperature (TCH)

232 °C TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

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20 - www.qorvo.com Load-Pull Smith Charts1,

2 Notes: 1. VD =

28 V, IDQ =

260 mA,

100 ?S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page

15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material. TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

7 of

20 - www.qorvo.com Load-Pull Smith Charts1,

2 Notes: 1. VD =

28 V, IDQ =

260 mA,

100 ?S PW, 20% DC pulsed. Performance is at 3dB gain compression referenced to peak gain. 2. See page

15 for load-pull and source-pull reference planes. 11.7-Ω load-pull TRL fixtures are built with 20-mil RO4350B material. TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -