PDF《TGF2929-FL》

TGF2929-FL 100W, 28V, DCC3.

5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

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20 - www.qorvo.com Key Features ? Frequency: DC to 3.5 GHz ? Output Power (P3dB)1:

107 W ? Linear Gain1:

17 dB ? Typical DEff3dB 1: 60.8% ? Operating Voltage:

28 V ? Low thermal resistance package ? Pulse capable Note 1: @ 3.5 GHz Product Overview The Qorvo TGF2929-FL is a

107 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram Applications ? Military radar ? Civilian radar ? Professional and military radio communications ? Test instrumentation ? Wideband or narrowband amplifiers ? Jammers Part No. Description TGF2929-FL DC?C3.5?GHz RF Power Transistor TGF2929-FLEVB01 3.1 C 3.5 GHz Evaluation Board TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

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20 - www.qorvo.com Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG -7 to +2 V Drain Current

12 A Gate Current Range, IG See page 4. mA Power Dissipation, 20% DC

500 uS PW, PDISS, T = 85°C

144 W RF Input Power, CW, T = 25?°C +39.8 dBm Mounting Temperature (30?Seconds) 320? °C Storage Temperature ?65 to +150 °C Notes: 1. Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions1 Parameter Min Typ Max Units Operating Temp. Range ?40 +25 +85 ?°C Drain Voltage Range, VD +12 +28 +50 V Drain Bias Current, IDQ C

260 C mA Peak Drain Current, ID

3 C 7.2 C A Gate Voltage, VG

4 C ?2.7 C V Power Dissipation, CW (PD)2 C C

82 W Power Dissipation, Pulsed (PD)2,

3 C C

140 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package base at

85 °C 3. Pulse Width =

100 uS, Duty Cycle = 20% 4. To be adjusted to desired IDQ Pulsed Characterization C Load-Pull Performance C Power Tuned1 Parameters Typical Values Unit Frequency, F 1.0 2.0 3.0 3.5 GHz Linear Gain, GLIN 21.2 16.7 15.6 15.8 dB Output Power at 3dB compression point, P3dB

100 132

120 107 W Drain Efficiency at 3dB compression point, DEff3dB 61.0 60.4 57.6 54.4 % Gain at 3dB compression point 18.2 13.7 12.6 12.8 dB Notes: 1. Test conditions unless otherwise noted: VD = +28?V, IDQ = 260?mA, Temp = +25?°C Pulsed Characterization C Load-Pull Performance C Efficiency Tuned1 Parameters Typical Values Unit Frequency, F 1.0 2.0 3.0 3.5 GHz Linear Gain, GLIN 22.3 17.2 16.9 17.0 dB Output Power at 3dB compression point, P3dB 47.8 50.1 49.8 48.9 W Drain Efficiency at 3dB compression point, DEff3dB 76.6 66.9 68.3 60.8 % Gain at 3dB compression point, G3dB 19.3 14.2 13.9 14.0 dB Notes: 1. Test conditions unless otherwise noted: VD = +28?V, IDQ = 260?mA, Temp = +25?°C TGF2929-FL 100W, 28V, DCC3.5 GHz, GaN RF Power Transistor Datasheet Rev. B, August 24,

2018 | Subject to change without notice -

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20 - www.qorvo.com RF Characterization C 3.1 C 3.5 GHz EVB Performance At 3.3 GHz1 Parameter Min Typ Max Units Linear Gain, GLIN C 15.0 C ?dB Output Power at 3dB compression point, P3dB C