PDF《IXTA220N055T7》

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0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDS - Volts I D - Amperes VGS = 10V 9V 8V 6V 7V 5V Fig. 2. Extended Output Characteristics @ 25?C

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4 4.5 VDS - Volts I D - Amperes VGS = 10V 9V 8V 5V 7V 6V Fig. 3. Output Characteristics @ 150?C

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1 1.2 1.4 VDS - Volts I D - Amperes VGS = 10V 9V 8V 7V 6V 5V Fig. 4. RDS(on) Normalized to ID = 110A Value vs. Junction Temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25

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150 175 TJ - Degrees Centigrade R DS(on) - Normalized VGS = 10V I D = 220A I D = 110A Fig. 5. RDS(on) Normalized to ID = 110A Value vs. Drain Current 0.8

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320 ID - Amperes R DS(on) - Normalized VGS = 10V 15V - - - - TJ = 175?C TJ = 25?C Fig. 6. Drain Current vs. Case Temperature

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150 175 TC - Degrees Centigrade I D - Amperes External Lead Current Limit for TO-263 (7-Lead) External Lead Current Limit for TO-3P, TO-220, & TO-263 IXYS reserves the right to change limits, test conditions, and dimensions. IXTA220N055T7 Fig. 7. Input Admittance

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6 6.5 VGS - Volts I D - Amperes TJ = 150?C 25?C -40?C Fig. 8. Transconductance

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240 270 ID - Amperes g f s - Siemens TJ = - 40?C 25?C 150?C Fig. 9. Forward Voltage Drop of Intrinsic Diode

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1 1.1 1.2 1.3 VSD - Volts I S - Amperes TJ = 150?C TJ = 25?C Fig. 10. Gate Charge

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140 160 QG - NanoCoulombs V GS - Volts VDS = 27.5V I D = 25A I G = 10mA Fig. 11. Capacitance

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1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1

1 10 Pulse Width - Seconds Z (th)JC - ?C / W ?

2006 IXYS CORPORATION All rights reserved IXTA 220N055T7 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current

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50 ID - Amperes t r - Nanoseconds RG = 5? VGS = 10V VDS = 30V TJ = 125?C TJ = 25?C Fig. 15. Resistive Turn-on Switching Times vs. Gate Resistance

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60 65 t d ( o n ) - Nanoseconds t r td(on) TJ = 125?C, VGS = 10V VDS = 30V I D = 50A, 25A Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature

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90 t d ( o f f ) - Nanoseconds t f td(off) RG = 5?, VGS = 10V VDS = 30V I D = 25A, 50A I D = 50A, 25A Fig. 17. Resistive Turn-off Switching Times vs. Drain Current

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80 84 t d ( o f f ) - Nanoseconds t f td(off) RG = 5?, VGS = 10V VDS = 30V TJ = 125?C TJ = 25?C Fig. 13. Resistive Turn-on Rise Time vs. Junction Temperature

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