PDF《IXTA220N055T7》

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2006 IXYS CORPORATION All rights reserved DS99683 (11/06) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 175° C

55 V VDGR TJ = 25° C to 175° C;

RGS =

1 M?

55 V VGSM Transient ±

20 V ID25 TC = 25° C

220 A ILRMS Package Current Limit, RMS

120 A IDM TC = 25° C, pulse width limited by TJM

600 A IAR TC =25°C

25 A EAS TC = 25° C 1.

0 J dv/dt IS ≤IDM , di/dt ≤100 A/?s, VDD ≤VDSS

3 V/ns TJ ≤175° C, RG =

5 ? PD TC =25°C

430 W TJ -55 ... +175 °C TJM

175 °C Tstg -55 ... +175 °C TL 1.6 mm (0.062 in.) from case for

10 s

300 °C TSOLD Plastic body for

10 seconds

260 °C Weight

3 g Symbol Test Conditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. BVDSS VGS =

0 V, ID =

250 ?A

55 V VGS(th) VDS = VGS , ID =

250 ?A 2.0 4.0 V IGSS VGS = ±

20 V, VDS =

0 V ±

200 nA IDSS VDS = VDSS

5 ?A VGS =

0 V TJ = 150° C

250 ?A RDS(on) VGS =

10 V, ID =

25 A, Note

1 3.1 4.0 m ? TrenchMVTM Power MOSFET N-ChannelEnhancementMode AvalancheRated IXTA220N055T7 VDSS =

55 V ID25 =

220 A RDS(on) ≤ ≤ ≤ ≤ ≤ 4.0 m ? ? ? ? ? TO-263 (7-lead) (IXTA..7) Pin-out:1 - Gate 2,

3 - Source

4 - NC (cut) 5,6,7 - Source TAB (8) - Drain

1 7 (TAB) Preliminary Technical Information Features Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect

175 ° C Operating Temperature Advantages Easy to mount Space savings High power density Applications Automotive - Motor Drives - High Side Switch - 12V Battery - ABS Systems DC/DC Converters and Off-line UPS Primary- Side Switch High Current Switching Applications IXYS reserves the right to change limits, test conditions, and dimensions. IXTA220N055T7 Notes: 1. Pulse test, t ≤300 ?s, duty cycle d ≤

2 %;

Pins:

1 - Gate 2,

3 - Source

4 - Drain 5,6,7 - Source Tab (8) - Drain TO-263 (7-lead) (IXTA...7) Outline Symbol TestConditions Characteristic Values (TJ = 25° C unless otherwise specified) Min. Typ. Max. gfs VDS =

10 V;

ID =

60 A, Note

1 75

120 S Ciss

7200 pF Coss VGS =

0 V, VDS =

25 V, f =

1 MHz

1270 pF Crss

285 pF td(on) Resistive Switching Times

36 ns tr VGS =

10 V, VDS =

30 V, ID =

25 A

62 ns td(off) RG =

5 ? (External)

53 ns tf

53 ns Qg(on)

158 nC Qgs VGS =

10 V, VDS = 0.5 VDSS , ID =

25 A

42 nC Qgd

46 nC RthJC 0.35 ° C/W Source-Drain Diode Symbol TestConditions Characteristic Values TJ = 25° C unless otherwise specified) Min. Typ. Max. IS VGS =

0 V

220 A ISM Pulse width limited by TJM

600 A VSD IF =

25 A, VGS =

0 V, Note

1 1.0 V trr IF =

25 A, -dI/dt =

100 A/?s

70 ns VR =

25 V, VGS =

0 V IXYSMOSFETs andIGBTsarecovered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,063,975B2 oneormoreofthefollowingU.S.patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 7,071,537 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537 PRELIMINARYTECHNICALINFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots;

but also may yet contain some information supplied during a pre- production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. ?

2006 IXYS CORPORATION All rights reserved IXTA220N055T7 Fig. 1. Output Characteristics @ 25?C