PDF《BUK7Y28-75B》

25 °C - - 35.5 A ISM peak source current tp ≤

10 ?s;

pulsed;

Tmb =

25 °C - -

142 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 35.5 A;

Vsup ≤

75 V;

RGS =

50 ?;

VGS =

10 V;

Tj(init) =

25 °C;

unclamped - -

75 mJ EDS(AL)R repetitive drain-source avalanche energy see Figure

3 [1][2][3] - - - J BUK7Y28-75B All information provided in this document is subject to legal disclaimers. Product data sheet Rev.

04 ―

7 April

2010 4 of

14 Nexperia BUK7Y28-75B N-channel TrenchMOS standard level FET Fig 1. Continuous drain current as a function of mounting base temperature Fig 2. Normalized total power dissipation as a function of mounting base temperature Fig 3. Single-pulse and repetitive avalanche rating;

avalanche current as a function of avalanche time 003aac514

0 10

20 30

40 0

50 100

150 200 Tmb (°C) ID (A) Tmb (°C)

0 200

150 50

100 03na19

40 80

120 Pder (%)

0 003aac493 10-1

1 10

102 10-3 10-2 10-1

1 10 tAL (ms) IAL (A) (1) (2) (3) BUK7Y28-75B All information provided in this document is subject to legal disclaimers. Product data sheet Rev.

04 ―

7 April

2010 5 of

14 Nexperia BUK7Y28-75B N-channel TrenchMOS standard level FET 5. Thermal characteristics Fig 4. Safe operating area;

continuous and peak drain currents as a function of drain-source voltage. 003aac614 10-2 10-1

1 10

102 103

1 10

102 103 VDS (V) ID (A) DC Limit RDSon = VDS / ID

100 ms

10 ms

1 ms

100 μs tp =

10 μs Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base see Figure

5 - - 1.76 K/W Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration. 003aac482 10-2 10-1

1 10 10-6 10-5 10-4 10-3 10-2 10-1

1 tp (s) Zth (j-mb) (K/W) δ = 0.5 0.2 0.1 0.02 single shot 0.05 tp T P t tp T δ = BUK7Y28-75B All information provided in this document is subject to legal disclaimers. Product data sheet Rev.

04 ―

7 April

2010 6 of

14 Nexperia BUK7Y28-75B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =

250 ?A;

VGS =

0 V;

Tj =

25 °C

75 - - V ID =

250 ?A;

VGS =

0 V;

Tj = -55 °C

68 - - V VGS(th) gate-source threshold voltage ID =

1 mA;

VDS = VGS;

Tj =

25 °C;

see Figure 10;

see Figure

11 2

3 4 V ID =

1 mA;

VDS = VGS;

Tj = -55 °C;

see Figure

10 - - 4.4 V ID =

1 mA;

VDS = VGS;

Tj =

175 °C;

see Figure

10 1 - - V IDSS drain leakage current VDS =

75 V;

VGS =

0 V;

Tj =

25 °C - 0.02

1 ?A VDS =

75 V;

VGS =

0 V;

Tj =

175 °C - -

500 ?A IGSS gate leakage current VDS =

0 V;

VGS =

20 V;

Tj =

25 °C -

2 100 nA VDS =

0 V;

VGS = -20 V;

Tj =

25 °C -

2 100 nA RDSon drain-source on-state resistance VGS =

10 V;

ID =

15 A;

Tj =

175 °C;

see Figure

12 - - 67.2 m? VGS =

10 V;

ID =

15 A;

Tj =

25 °C;

see Figure 12;

see Figure

13 -

23 28 m? Dynamic characteristics QG(tot) total gate charge ID =

15 A;

VDS =

60 V;

VGS =

10 V;

see Figure

14 - 21.2 - nC QGS gate-source charge -

5 - nC QGD gate-drain charge - 7.4 - nC Ciss input capacitance VGS =

0 V;

VDS =

25 V;

f =

1 MHz;

Tj =

25 °C;

see Figure