PDF《QS5U28》

QS5U28 2.

5V Drive Pch+SBD MOSFET Datasheet l lOutline VDSS -20V TSMT5 RDS(on)(Max.) 245mΩ ID ±2.0A PD 1.25W l lInner circuit l lFeatures 1) The QS5U28 combines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Low on-state resistance with fast swicthing 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ;

RoHS compliant. l lPackaging specifications Type Packing Embossed Tape Reel size (mm)

180 l lApplication Tape width (mm)

8 Load switch, DC/ DC conversion Basic ordering unit (pcs)

3000 Taping code TR Marking U28 l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Gate - Source voltage VGSS ±12 V Continuous drain current ID ±2.0 A Pulsed drain current ID, pulse *1 ±8.0 A Continuous source current (body diode) IS -1.0 A Pulsed source current (body diode) IS, pulse *1 -8.0 A Power dissipation PD *3 0.9 W/element Junction temperature Tj

150 ℃ www.rohm.com ?

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20130609 - Rev.001 QS5U28 Datasheet l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Repetitive peak reverse voltage VRM

25 V Reverse voltage VR

20 V Forward current IF 1.0 A Forward current surge peak IFSM *2 3.0 A Power dissipation PD *3 0.7 W/element Junction temperature Tj

150 ℃ Parameter Symbol Value Unit Power dissipation PD *3 1.25 W/total Range of storage temperature Tstg -55 to +150 ℃ l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Gate - Source leakage current IGSS VGS = ±12V, VDS = 0V - - ±10 μA Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA -20 - - V Zero gate voltage drain current IDSS VDS = -20V, VGS = 0V - - -1 μA Gate threshold voltage VGS(th) VDS = -10V, ID = -1mA -0.7 - -2.0 V Static drain - source on - state resistance RDS(on) *4 VGS = -4.5V, ID = -2.0A -

90 125 mΩ VGS = -4V, ID = -2.0A -

97 135 VGS = -2.5V, ID = -1.0A -

175 245 Transconductance gfs *4 VDS = -10V, ID = -1.0A 1.6 - - S www.rohm.com ?

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20130609 - Rev.001 QS5U28 Datasheet l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Input capacitance Ciss VGS = 0V -

450 - pF Output capacitance Coss VDS = -10V -

70 - Reverse transfer capacitance Crss f = 1MHz -

52 - Turn - on delay time td(on) *4 VDD ? -15V, VGS = -4.5V -

10 - ns Rise time tr *4 ID = -1.0A -

16 - Turn - off delay time td(off) *4 RL = 15Ω -

32 - Fall time tf *4 RG = 10Ω -

15 - l lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Total gate charge Qg *4 VDD ? -15V, ID = -2.0A VGS = -4.5V - 4.8 - nC Gate - Source charge Qgs *4 - 1.0 - Gate - Drain charge Qgd *4 - 1.3 - l lBody diode electirical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward voltage VSD *4 VGS = 0V, IS = -1.0A - - -1.2 V www.rohm.com ?

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20130609 - Rev.001 QS5U28 Datasheet l lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Forward voltage VF IF = 1.0A - - 0.45 V Reverse current IR VR = 20V - -

200 μA *1 Pw ≤ 10μs, Duty cycle ≤ 1% *2 60Hz?1 cycle *3 Mounted on a ceramic board *4 Pulsed www.rohm.com ?

2014 ROHMCo., Ltd. All rights reserved. 4/10

20130609 - Rev.001 QS5U28 Datasheet l lElectrical characteristic curves Fig.1 Typical Capacitance vs. Drain - Source Voltage Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics Fig.4 Typical Transfer Characteristics www.rohm.com ?