PDF《AO4494》

AO4494 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 6.

5m? (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max

28 40

59 75 RθJL

16 24 W 3.1 Maximum Junction-to-Lead Steady-State ° C/W Steady-State ° C/W Maximum Junction-to-Ambient A D Units Maximum Junction-to-Ambient A TC=25° C TC=70° C Power Dissipation B PD A ID

18 14 mJ Avalanche Current C

51 A Maximum Units Parameter Absolute Maximum Ratings TA=25° C unless otherwise noted The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications. V V ±20 Gate-Source Voltage Drain-Source Voltage

30 t ≤ 10s ° C/W Parameter RθJA Junction and Storage Temperature Range -55 to

150 ° C Thermal Characteristics RDS(ON) < 9.5m? TC=25° C

2 TC=70° C

32 130 Pulsed Drain Current C Continuous Drain Current Repetitive avalanche energy L=0.1mH C SOIC-8 Top View Bottom View D D D D S S S G G D S Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4494 Symbol Min Typ Max Units BVDSS

30 V VDS=30V, VGS=0V

1 TJ=125° C

5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 1.5

2 2.5 V ID(ON)

130 A 5.4 6.5 TJ=125° C 8.4 10.1 7.5 9.5 m? gFS

70 S VSD 0.75

1 V IS

3 A Ciss

1270 1590

1900 pF Coss

170 240

310 pF Crss

87 145

200 pF Rg 0.8 1.5 2.3 ? Qg(10V)

24 30

36 nC Qg(4.5V)

12 15

18 nC Qgs 4.2 5.2 6.2 nC Qgd 4.7 7.8

11 nC tD(on) 6.7 ns tr 3.5 ns tD(off) 22.5 ns tf

4 ns trr

22 28

34 ns Qrr

19 24

30 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/?s Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=15V, RL=0.83?, RGEN=3? Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=15V, ID=18A Gate Source Charge Gate Drain Charge Total Gate Charge m? IS=1A,VGS=0V VDS=5V, ID=18A VGS=4.5V, ID=16A Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance IDSS ?A VDS=VGS ID=250?A VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250?A, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=18A Reverse Transfer Capacitance IF=18A, dI/dt=500A/?s VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150° C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150° C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150° C. Ratings are based on low frequency and duty cycles to keep initial TJ =25° C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures

1 to

6 are obtained using