编辑: hys520855 2019-07-04

3375 5.25 kW K Module Ratings Symbol Definitions Conditions min. typ. max. Unit TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature -40 -40

125 150

125 °C °C °C VISOL isolation voltage IISOL <

1 mA;

50/60 Hz

2500 V~ CTI comparative tracking index

200 Md mounting torque (M5) 2.7 3.3 Nm dS dA creep distance on surface strike distance through air

6 6 mm mm Rpin-chip resistance pin to chip

5 mW RthCH thermal resistance case to heatsink with heatsink compound 0.02 K/W Weight

180 g Equivalent Circuits for Simulation Ratings Symbol Definitions Conditions min. typ. max. Unit V0 R0 IGBT T1 - T6 TVJ = 125°C 1.0

20 V mW V0 R0 Diode D1 - D6 TVJ = 125°C 1.1 14.2 V mW I V0 R0 ?

2010 IXYS All rights reserved

4 -

7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions. Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MWI 50-12T7T MWI50-12T7T Box

6 501972 Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394 ) X

0 baseplate typ.

100 ?m convex over

75 mm before mounting 20.5 ±0.1

17 ±0.5

7 -0.5 ? 2.1;

l=6 0.2 ± 0.2 ± ±0.1 ±0.2 ±0.3 Y B ? 2.5 ? 2.1 Detail Z +0.3 ?

6 6 1.5 Z Detail X 0.05 ± 0.02 ± 0.8 1.2 Detail Y 0.05 ± ±1° 15° 0.8

45 38.4

32 11 ?5.5 72.7 75.7 82.3

93 107.5 3.5 -0.5 42.69 38.88 54.12 50.31 61.74 65.55 76.98 73.17 19.83 16.02 31.26 27.45

0 20.95 11.43 7.62 7.62 11.43 20.95 76.98 61.74

2 1

6 5

3 4

8 7

9 10

12 11 86.1 73.17 57.93 38.88 42.69 23.64 19.83

24 21

22 23

19 20

17 18 n0.4 j AB A

15 14

13 27

28 16

25 26 23,

24 21,

22 19,

20 9

10 11

12 5

6 7

8 1

2 3

4 25,

26 27,

28 NTC

17 18 15,

16 13,

14 Product Marking ?

2010 IXYS All rights reserved

5 -

7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0 20

40 60

80 100

0 20

40 60

80 100

0 2

4 6

8 10

12 14 IC [A] VCE [V] IC [A] E [mJ] VGE =

15 V

4 5

6 7

8 9

10 11

12 0

20 40

60 80

100 0

1 2

3 4

5 0

20 40

60 80

100 TVJ = 125°C TVJ = 125°C TVJ = 25°C

9 V

11 V VCE =

20 V TVJ = 125°C TVJ = 25°C

10 20

30 40

50 60

70 0

2 4

6 8

10 12 RG [Ω] Eoff Eon Erec IC [A] VGE [V] VCE [V] IC [A] VGE =

13 V

15 V

17 V

19 V E [mJ] Fig.

1 Typ. outpurt characteristics

0 100

200 300

400 500

600 -15 -10 -5

0 5

10 15

20 Qg [nC] VGE [V] Fig.

2 Typ. outpurt characteristics Fig.

3 Typ. transfer characteristics Fig.

4 Typ. turn-on gate charge Fig.

5 Typical switching losses versus collector current impedance Fig.

6 Typical switching losses versus gate resistancae IC =

50 A VCE =

600 V VCE =

600 V VGE = ±15 V RG =

18 Ω TVJ = 125°C VCE =

600 V VGE = ±15 V IC =

50 A TVJ = 125°C E off Eon E rec Inverter T1 - T6 ?

2010 IXYS All rights reserved

6 -

7 20100831d MWI 50-12T7T IXYS reserves the right to change limits, test conditions and dimensions.

600 700

800 900

1000 1100

1200 1300

2 4

6 8

10 12

14 0.0 0.5 1.0 1.5 2.0 2.5 3.0

0 20

40 60

80 100

120 Qrr [?C] IF [A] VF [V] diF /dt [A/?s] TVJ = 125°C VR =

600 V

30 A

60 A

120 A Fig.

7 Typ. Forward current versus VF Fig.

8 Typ. reverse recovery charge Qrr vs. di/dt

600 700

800 900

1000 1100

1200 1300

0 10

20 30

40 50

60 70

80 90 IRR [A] diF /dt [A/?s] TVJ = 125°C VR =

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