PDF《datasheet》

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1 - K4T56163QN Rev.

1.03, Feb.

2010 SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an AS IS basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or other- wise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ?

2010 Samsung Electronics Co., Ltd. All rights reserved. datasheet 256Mb N-die DDR2 SDRAM 84FBGA with Lead-Free &

Halogen-Free (RoHS compliant) -

2 - K4T56163QN datasheet DDR2 SDRAM Rev. 1.03 Revision History Revision No. History Draft Date Remark Editor 1.0 - Initial Release Jul.

2009 - S.H.Kim 1.01 - Corrected Typo. Oct.

2009 - S.H.Kim 1.02 - Corrected Typo. Nov.

2009 - S.H.Kim 1.03 - Changed layout and Corrected Typo. Feb.

2010 - S.H.Kim -

3 - K4T56163QN datasheet DDR2 SDRAM Rev. 1.03 Table Of Contents 256Mb N-die DDR2 SDRAM 1. Ordering Information

4 2. Key Features.4 3. Package pinout/Mechanical Dimension &

Addressing.5 3.1 x16 Package Pinout (Top view) : 84ball FBGA Package

5 3.2 FBGA Package Dimension (x16)6 4. Input/Output Functional Description.7 5. DDR2 SDRAM Addressing

8 6. Absolute Maximum Ratings

9 7. AC &

DC Operating Conditions.9 7.1 Recommended DC operating Conditions (SSTL_1.8)9 7.2 Operating Temperature Condition

10 7.3 Input DC Logic Level

10 7.4 Input AC Logic Level

10 7.5 AC Input Test Conditions.10 7.6 Differential input AC logic Level.11 7.7 Differential AC output parameters

11 8. ODT DC electrical characteristics

11 9. OCD default characteristics

12 10. IDD Specification Parameters and Test Conditions.13 11. DDR2 SDRAM IDD Spec Table.15 12. Input/Output capacitance

16 13. Electrical Characteristics &

AC Timing for DDR2-1066/800/667

16 13.1 Refresh Parameters by Device Density.16 13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin

16 13.3 Timing Parameters by Speed Grade

17 14. General notes, which may apply for all AC parameters.19 15. Specific Notes for dedicated AC parameters

21 -

4 - K4T56163QN datasheet DDR2 SDRAM Rev. 1.03 1. Ordering Information NOTE : 1. Speed bin is in order of CL-tRCD-tRP 2. H of Part number(12th digit) stands for Lead-Free, Halogen-Free, and RoHS compliant products. 2. Key Features Organization DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Package 16Mx16 K4T56163QN-HCF8 K4T56163QN-HCE7 K4T56163QN-HCF7 K4T56163QN-HCE6

84 FBGA Speed DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Units CAS Latency

7 5

6 5 tCK tRCD(min) 13.125 12.5

15 15 ns tRP(min) 13.125 12.5

15 15 ns tRC(min) 58.125 57.5

60 60 ns ? JEDEC standard VDD = 1.8V ± 0.1V Power Supply ? VDDQ = 1.8V ± 0.1V ? 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin and 533MHz fCK for 1066Mb/sec/pin ?