PDF《PTVA104501EH》

All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device―observe handling precautions!

4600 Silicon Drive | Durham, NC

27703 | www.

wolfspeed.com Rev. 03, 2018-06-14 PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET

450 W,

50 V,

960 C

1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power ampli- fier applications in the

960 to

1215 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange.Manufactured withWolfspeed's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA104501EH Package H-33288-2 Features ? Broadband internal input and output matching ? High gain and efficiency ? Integrated ESD protection ? Human Body Model Class

2 (per ANSI/ESDA/ JEDEC JS-001) ? Low thermal resistance ? Excellent ruggedness ? Pb-free and RoHS compliant ? Capable of withstanding a 10:1 load mismatch (all phase angles) at

450 W peak under RF pulse,

128 ?S, 10% duty cycle.

15 25

35 45

55 65

15 25

35 45

55 65

28 30

32 34

36 38

40 42

44 Efficiency (%) P OUT (dBm) PIN (dBm) Power Sweep, Pulsed RF VDD =

50 V, IDQ =

200 mA, TCASE = 25°C,

128 ?s pulse width, 10% duty cycle

960 MHz

1030 Mhz

1090 MHz

1150 MHz

1215 MHz Output power Efficiency a104501eh_g1 RF Characteristics Pulsed RF Performance (tested in Wolfspeed test fixture) VDD =

50 V, IDQ =

200 mA, POUT =

450 W (peak), ?1 =

960 MHz, ?2 =

1090 MHz, ?3 =

1215 MHz, RF pulse

128 ?s, 10% duty cycle Characteristic Symbol Min Typ Max Unit Gain Gps 16.5 17.5 ― dB Drain Efficiency hD

53

58 ― % Gain Flatness DG ― 0.85 1.8 dB Return Loss IRL ― C9.5 C6 dB

4600 Silicon Drive | Durham, NC

27703 | www.wolfspeed.com Rev. 03, 2018-06-14

2 PTVA104501EH DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS =

0 V, IDS =

10 mA V(BR)DSS

105 ― ― V Drain Leakage Current VDS =

50 V, VGS =

0 V IDSS ― ―

1 ?A VDS =

111 V, VGS =

0 V IDSS ― ―

10 ?A On-State Resistance VGS =

10 V, VDS = 0.1 V RDS(on) ― 0.1 ― W Operating Gate Voltage VDS =

50 V, IDQ =

200 mA VGS 3.0 3.5 4.0 V Gate Leakage Current VGS =

10 V, VDS =

0 V IGSS ― ―

1 ?A Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS

105 V Gate-Source Voltage VGS C6 to +12 V Operating Voltage VDD

0 to +55 V Junction Temperature TJ

225 °C Storage Temperature Range TSTG C65 to +150 °C Thermal Resistance RqJC 0.25 °C/W (TCASE = 70°C,

430 W CW, ? =

1090 MHZ, VDD =

50 V, IDQ =

200 mA) Ordering Information Type and Version Order Code Package Description Shipping PTVA104501EH V1 R0 PTVA104501EH-V1-R0 H-33288-2 Tape & Reel,

50 pcs PTVA104501EH V1 R250 PTVA104501EH-V1-R250 H-33288-2 Tape & Reel,

250 pcs RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in Wolfspeed test fixture) VDD =

50 V, IDQ =

200 mA, Input signal (tr = 7.0 ns, tf = 7.0 ns),

128 ?s pulse width, 10% duty cycle, class AB test Mode of Operation ? (MHz) IRL (dB) P1dB P3dB Max Pdroop (pulse) @ P1dB tr (ns) @P1dB tf (ns) @P1dB Gain (dB) Eff (%) POUT (W) Gain (dB) Eff (%) POUT (W)

128 ?s, 10%

960 C7.5 18.0

56 460 16.0

53 490 0.15