PDF《SQM60N06-15》

10 V VDS =

30 V, ID =

60 A -

33 50 nC Gate-Source Chargec Qgs - 8.9 - Gate-Drain Chargec Qgd - 7.4 - Gate Resistance Rg f =

1 MHz 0.8 1.6 2.4 ? Turn-On Delay Timec td(on) VDD =

30 V, RL = 0.5 ? ID ?

60 A, VGEN =

10 V, Rg =

1 ? -

11 17 ns Rise Timec tr -

12 18 Turn-Off Delay Timec td(off) -

21 32 Fall Timec tf -

7 11 Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM - -

227 A Forward Voltage VSD IF =

30 A, VGS =

0 - 0.9 1.5 V SQM60N06-15 www.vishay.com Vishay Siliconix S11-2035-Rev. C, 17-Oct-11

3 Document Number:

64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA =

25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance Transfer Characteristics On-Resistance vs. Drain Current Gate Charge

0 20

40 60

80 100

0 3

6 9

12 15 VGS =

10 V thru

7 V VGS =

5 V VGS =

4 V VGS =

6 V VDS - Drain-to-Source Voltage (V) I D - Drain Current (A)

0 20

40 60

80 100

0 12

24 36

48 60 ID - Drain Current (A) - Tran s conductance ( S ) g f s TC =

125 °C TC =

25 °C TC = -

55 °C Crss

0 500

1000 1500

2000 2500

3000 0

10 20

30 40

50 60 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF)

0 20

40 60

80 100

0 2

4 6

8 10 TC = -

55 °C TC =

125 °C TC =

25 °C VGS - Gate-to-Source Voltage (V) I D - Drain Current (A)

0 0.005 0.010 0.015 0.020 0.025 0.030

0 20

40 60

80 100 VGS =

10 V R D S (on) - On-Re s i s tance ( Ω ) ID - Drain Current (A)

0 2

4 6

8 10

0 5

10 15

20 25

30 35 ID =

60 A VDS =

30 V Qg - Total Gate Charge (nC) V GS - G ate-to- S ource Voltage (V) SQM60N06-15 www.vishay.com Vishay Siliconix S11-2035-Rev. C, 17-Oct-11

4 Document Number:

64710 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (TA =

25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Source Drain Diode Forward Voltage Threshold Voltage Drain Source Breakdown vs. Junction Temperature 0.5 0.9 1.3 1.7 2.1 2.5 -

50 -

25 0

25 50

75 100

125 150

175 ID =

30 A VGS =

10 V TJ - Junction Temperature (°C) (Normalized) R D S (on) - On-Re s i s tance

0 0.02 0.04 0.06 0.08 0.10

0 2

4 6

8 10 TJ =

25 °C TJ =

150 °C R D S (on) - On-Re s i s tance ( Ω ) VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) - Source Current (A) I S

0 0.2 0.4 0.6 0.8 1.0 1.2

1 0.01 0.001 0.1

10 100 TJ =

25 °C TJ =

150 °C - 1.7 - 1.2 - 0.7 - 0.2 0.3 0.8 -

50 -

25 0

25 50

75 100

125 150

175 ID =

5 mA ID =

250 μA V GS (th) Variance (V) TJ - Temperature (°C) -

50 -

25 0

25 50

75 100

125 150

175 V DS - Drain-to-Source Voltage (V) TJ - ........