PDF《Comchip》

Io = 500mA CDBQC0530L-HF Page

1 QW-G1116 REV:B A mA V

3 500

30 IO VR IFSM O C O C +125 +125 TSTG Tj Storage temperature range Junction temperature range Mean rectifying current DC reverse voltage Peak forward surge current Parameter Conditions Symbol Min.

Typ. Max. Unit V VF Forward voltage Parameter Conditions Symbol Min. Typ. Max. Unit Comchip Technology CO., LTD. Comchip S M D D i o d e S p e c i a l i s t SMD Schottky Barrier Diodes Maximum Ratings(at TA=25°C unless otherwise noted) Electrical Characteristics(at T =25°C unless otherwise noted) A Mechanical data - Terminals: Gold plated, solderable per MIL-STD-750, method 2026. - Mounting position: Any - Weight: 0.001 grams(approx.). - Case: 0402C/SOD-923F standard package, molded plastic. - Polarity: Color band denotes cathode end. Circuit Diagram Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. -40 IF = 500mA IF = 10mA IF = 100mA VR = 30V, TA=25°C uA

200 IR 0.25 0.45 0.34 Reverse current 8.3ms single half sine-wave superimposed on rate load, 1cycle (JEDEC method) VR = 30V RoHS Device Halogen Free

90 -40 Company reserves the right to improve product design , functions and reliability without notice. V

30 VRRM Reverse stand-off voltage °C/W

250 Thermal resistance R JA θ Dimensions in inches and (millimeter) 0402C/SOD-923F 0.022(0.55) 0.018(0.45) 0.001(0.02) Max. 0.041(1.05) 0.037(0.95) 0.026(0.65) BSC. 0.012(0.30) 0.008(0.20) 0.022(0.55) 0.018(0.45) 0.026(0.65) 0.022(0.55) Total power dissipation PD mW

400 TA ≤ 25°C VR = 1V, f=1MHZ pF CD Diode capacitance

36 Junction to ambient RATING AND CHARACTERISTIC CURVES (CDBQC0530L-HF) Page

2 REV:B Capacitance Between Terminals, ( P F) Reverse Voltage, (V) Ambient Temperature, (°C) Power Dissipation, (mW) Fig.5 - Power Derating Curve Fig.3 - Capacitance Characteristics

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30 Comchip Technology CO., LTD. Fig.1 - Forward Characteristics Forward Current, (mA) QW-G1116 Comchip S M D D i o d e S p e c i a l i s t TA=25°C f =

1 MHz SMD Schottky Barrier Diodes 0.4

0 0.1 0.3

0 100

200 300

400 0

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1000 Forward Voltage, (V)

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75 Company reserves the right to improve product design , functions and reliability without notice.

125 150 0.2 Fig.2 - Reverse Characteristics

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25 0 Reverse Current, (uA) Reverse Voltage, (V) 0.5 0.6

1 T =125°C J T =100°C J TJ=25°C T =50°C J T =75°C J T =125°C J T =100°C J TJ=75°C T =25°C J TJ=50°C Ambient Temperature, (°C) Average Forward Current, (%) Fig.4 - Forward Current Derating Curve

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3 REV:B Comchip Technology CO., LTD. QW-G1116 Comchip S M D D i o d e S p e c i a l i s t SMD Schottky Barrier Diodes Company reserves the right to improve product design , functions and reliability without notice. Reel Taping Specification D1 D2 D W1 T C o

1 2

0 Index hole d E F B W P P0 P1 A B C d D D2 D1 E F P P0 P1 T SYMBOL A W W1 (mm) (inch) 0.030 ± 0.002 0.046 ± 0.002 0.026 ± 0.002 7.008 ± 0.039 0.531 ± 0.008 SYMBOL (mm) (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 ± 0.008 0.75 ± 0.05 1.17 ± 0.05 4.00 ± 0.10 3.50 ± 0.10 1.75 ± 0.10 13.50 ± 0.20 0.65 ± 0.05 4.00 ± 0.10 2.00 ± 0.10 8.00 ± 0.20 178.00 ± 1.00 0402C (SOD-923F) 0402C (SOD-923F) 0.20 + 0.02 - 0.05 0.008 + 0.001 - 0.002 1.50 + 0.10 -

0 60.00 ± 0.50 0.059 + 0.004 -