PDF《HiPerFASTTM IGBT》

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2002 IXYS All rights reserved 98563A (06/02) Symbol TestConditions Maximum Ratings VCES TJ = 25°C to 150°C

600 V VCGR TJ = 25°C to 150°C;

RGE =

1 M?

600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C

14 A IC90 TC = 90°C

7 A ICM TC = 25°C,

1 ms

30 A SSOA VGE =

15 V, TVJ = 125°C, RG =

22 ? ICM =

14 A (RBSOA) Clamped inductive load, L =

300 ?H @ 0.

8 VCES PC TC = 25°C

54 W TJ -55 ... +150 °C TJM

150 °C Tstg -55 ... +150 °C Maximumleadtemperatureforsoldering

300 °C 1.6 mm (0.062 in.) from case for

10 s Md Mounting torque, (TO-220) Μ3 0.45/4 Nm/lb.in. Μ3.5 0.55/5 Weight TO-220

4 g TO-263

2 g Symbol TestConditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC =

250 ?A, VGE =

0 V

600 V VGE(th) IC =

250 ?A, VCE = VGE 2.5 5.5 V ICES VCE = 0.8 VCES TJ = 25°C

100 ?A VGE =

0 V TJ = 125°C

500 ?A IGES VCE =

0 V, VGE = ±20 V ±100 nA VCE(sat) IC = IC90 , VGE =

15 V 1.8 2.0 V Features ? International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB ? Medium frequency IGBT ? High current handling capability ? HiPerFASTTM HDMOSTM process ? MOS Gate turn-on - drive simplicity Applications ? Uninterruptible power supplies (UPS) ? Switched-mode and resonant-mode power supplies ? AC motor speed control ? DC servo and robot drives ? DC choppers Advantages ? High power density ? Suitable for surface mounting ? Very low switching losses for high frequency applications HiPerFASTTM IGBT IXGA 7N60B IXGP 7N60B VCES =

600 V IC25 =

14 A VCE(sat) =

2 V tfi =

150 ns G = Gate, C = Collector, E = Emitter, TAB = Collector G E C (TAB) TO-263AA(IXGA) G C E TO-220AB(IXGP) IXYS reserves the right to change limits, test conditions, and dimensions. IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXGA 7N60B IXGP 7N60B Symbol TestConditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90 ;

VCE =

10 V,

3 7 S Pulse test, t ≤

300 ?s, duty cycle ≤

2 % Cies

500 pF Coes VCE =

25 V, VGE =

0 V, f =

1 MHz

50 pF Cres

17 pF Qg

25 nC Qge IC = IC90 , VGE =

15 V, VCE = 0.5 VCES

5 nC Qgc

10 nC td(on)

9 ns tri

10 ns Eon 0.07 mJ td(off)

100 200 ns tfi

150 250 ns Eoff 0.3 0.6 mJ td(on)

10 ns tri

15 ns Eon 0.15 mJ td(off)

200 ns tfi

250 ns Eoff 0.6 mJ RthJC 2.3 K/W RthCK (TO-220) 0.25 K/W Inductive load, TJ = 25°C IC = IC90 , VGE =

15 V, L =

300 ?H, VCE = 0.8 VCES , RG = Roff =

22 ? Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES , higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90 , VGE =

15 V, L =

300 ?H VCE = 0.8 VCES , RG = Roff =

22 ? Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES , higher TJ or increased RG TO-220 AB Outline Dim. Millimeter Inches Min. Max. Min. Max. A 12.70 13.97 0.500 0.550 B 14.73 16.00 0.580 0.630 C 9.91 10.66 0.390 0.420 D 3.54 4.08 0.139 0.161 E 5.85 6.85 0.230 0.270 F 2.54 3.18 0.100 0.125 G 1.15 1.65 0.045 0.065 H 2.79 5.84 0.110 0.230 J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC M 4.32 4.82 0.170 0.190 N 1.14 1.39 0.045 0.055 Q 0.35 0.56 0.014 0.022 R 2.29 2.79 0.090 0.110 1. Gate 2. Collector 3. Emitter 4. Collector BottomSide Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4