PDF《VS-T20HF220》

VS-T20HF220 www.

vishay.com Vishay Semiconductors Revision: 05-Jan-18

1 Document Number:

94709 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power Rectifier Diodes (T-Modules),

2200 V,

20 A FEATURES ? Electrically isolated base plate ?

2200 VRRM ? Industrial standard packaging ? UL approved file E78996 ? Simplified mechanical designs, rapid assembly ? Large creepage distances ? Designed and qualified for industrial level ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS These series of D-55 (T-modules) use standard recovery power rectifier diodes. The semiconductors are electrically isolated from the metal base, allowing common heatsink and compact assembly to be built.? Applications include power supplies, battery charges, welders, motor controls, and solar panel application. ELECTRICAL SPECIFICATIONS PRIMARY CHARACTERISTICS IF(AV)

20 A Type Modules - diode, high voltage VRRM

2200 V Package D-55 (T-module) Circuit configuration Single diode D-55 (T-module) MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV)

20 A TC

85 °C IF(RMS)

31 A IFSM

50 Hz

450 60 Hz

470 I2t

50 Hz

1015 A2s

60 Hz

920 I2?t

10 125 A2?s VRRM

2200 V TJ -40 to +150 °C VOLTAGE RATINGS TYPE? NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ =

150 °C mA VS-T20HF220

22 2200

2250 18 VS-T20HF220 www.vishay.com Vishay Semiconductors Revision: 05-Jan-18

2 Document Number:

94709 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about

3 hours to allow for the spread of the compound Note ? Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave

20 A

85 °C Maximum RMS forward current IF(RMS)

31 A Maximum peak, one-cycle forward, non-repetitive surge current IFSM t =

10 ms No voltage reapplied Sinusoidal half wave, initial ? TJ = TJ maximum

450 A t = 8.3 ms

470 t =

10 ms

100 % VRRM reapplied

380 t = 8.3 ms

400 Maximum I2t for fusing I2t t =

10 ms No voltage reapplied

1015 A2s t = 8.3 ms

920 t =

10 ms

100 % VRRM reapplied

715 t = 8.3 ms

650 Maximum I2?t for fusing I2?t t = 0.1 ms to

10 ms, no voltage reapplied

10 125 A2?s Low level value of threshold voltage VF(TO)1 (16.7 % x ? x IF(AV) <

I <

? x IF(AV)),? TJ maximum 0.77 V High level value of threshold voltage VF(TO)2 (I >

? x IF(AV)), TJ maximum 0.89 Low level value of forward slope resistance rf1 (16.7 % x ? x IF(AV) <

I <

? x IF(AV)),? TJ maximum 8.5 m? High level value of forward slope resistance rf2 (I >

? x IF(AV)), TJ maximum 6.7 Maximum forward voltage drop VFM IFM =

60 A, TJ =