编辑: 阿拉蕾 | 2019-07-04 |
2) A built-in visible light filter minimizes the influence of stray light. 3) Lightweight and compact. Absolute maximum ratings (Ta=25?C) Electrical and optical characteristics (Ta=25?C) Electrical and optical characteristics curves Fig.4 Power dissipation / collector power dissipation vs. ambient temperature AMBIENT TEMPERATURE : Ta (?C)
100 80
60 40
20 PC PD
0 0
20 10
30 40
60 50
70 80
90 100 POWER DISSIPATION / COLLECTOR POWER DISSIPTION : P D /P C (mW) FORWARD CURRENT : I F ( mA ) FORWARD VOLTAGE : VF (V) Fig.3 Forward current vs. forward voltage
0 20
40 60
80 100
10 40
50 30
20 0 Fig.5 Relative output vs. ambient temperature Fig.2 Forward current vs. ambient temperature FORWARD CURRENT : I F (mA) AMBIENT TEMPERATURE : Ta (°C)
0 0.2 0.4 0.6 0.8
1 0
5 10
15 20
25 30 FORWARD CURRENT : IF(mA) COLLECTOR CURRENT : I C (mA) VCE=5V Standard paper(90%reflection) d=6mm
1 10
100 0
2 4
6 8
10 12
14 DISTANCE : d (mm) Fig.1 Relative output vs. distance RELATIVE COLLECTOR CURRENT : I C (%)
0 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
2 2.2 2.4 0.2
0 10
5 15
20 25
30 35 ? 25?C 0?C 25?C 50?C 75?C Fig.6 Collector current vs. forward current RELATIVE COLLECTOR CURRENT : I C (%) AMBIENT TEMPERATURE : Ta (?C) ?
40 ?
60 ?
20 0
20 40
60 80
100 0
20 40
60 80
100 120
160 140 Parameter Symbol VF IR ICEO λ P IC VCE(sat) tr tf Min. ? ? ? ? 0.08 ? ? Typ. 2.0 ? ?
800 0.3 0.1
10 Max. 2.6
100 10 ? 0.8 0.3 ? Unit V IF=30mA VR=9V VCE=10V ? VCE=2V, IF=10mA IF=20mA, IC=0.1mA VCE=10V, IF=20mA, RL=100Ω μ A μ A nm mA V μ s Conditions Forward voltage Reverse current Dark current Peak sensitivity wavelength Collector current Collector-emitter saturation voltage Response time Input charac- teristics Output charac- teristics Transfer charac- teristics Cut-off frequency ? Non-coherent Infrared light emitting diode used. Peak light emitting wavelength λ P fC IF=50mA ? ?
1 ? MHz ?
630 ? nm Maximum sensitivity wavelength λ P ?
800 ? nm ? This product is not designed to be protected against electromagnetic wave. VCC=5V, IC=1mA, RL=100Ω tr tf Response time ?
10 ? μ s Photo transistor Infrared light emitter diode Parameter Symbol IC VCEO PD VR IF PC VECO Topr Tstg Limits ?
25 to +85 ?
30 to +85
30 10
80 30 4.5
30 80 Unit mA V mW V V mA mW ?C ?C Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Operating temperature Storage temperature Input (LED) Output photo- transistor ( ) ? ? ? ?Reflector object : Standard white paper. (Reflection ratio = 90%) Reflector Reflective photointerrupter d = 6mm Dimensions (Unit : mm) Notes: 1. Unspecified tolerance shall be ±0.2 . 2. Dimension in parenthesis are show for reference. 2015.07 Rev.C Collector Emitter Cathode Anode Through hole 2-φ2.2 1.4 4-φ1.0 2.8 2.5 4- 0.5±0.1 4-0.6 (2.5) (2.8) 6.5 2.95 ± 0.5 4.9 6.4 2.8 0.35 DARK CURRENT : I CEO ( μ A) AMBIENT TEMPERATURE : Ta (?C) ?50 ?25
0 25
50 75
100 0.01 0.1
10000 1000
100 10
1 20V 10V VCE=30V Fig.7 Output characteristics Fig.8 Dark current vs. ambient temperature COLLECTOR CURRENT : I C (mA) COLLECTOR? EMITTER : VCE (V)
0 5
10 15
20 25
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 20m 15m 10m 5m IF=30m Standard paper(90%reflection) d=6mm R1102A www.rohm.com ?