PDF《PJU1N60》

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1 PJU1N60 April 12,2010-REV.00 FEATURES ? 1A, 600V, RDS(ON) =11?@VGS =10V, ID =0.5A ? Low ON Resistance ? Fast Switching ? Low Gate Charge ? Fully Characterized Avalanche Voltage and Current ? Specially Desigened for AC Adapter, Battery Charge and SMPS ? In compliance with EU RoHs 2002/95/EC Directives MECHANICAL DATA ? Case: TO-220AB / TO-251 Molded Plastic ? Terminals : Solderable per MIL-STD-750,Method

2026 ORDERING INFORMATION 600V N-Channel Enhancement Mode MOSFET Maximum RATINGS and Thermal Characteristics (TA =25O C unless otherwise noted ) Note : 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCTDESIGN,FUNCTIONSAND RELIABILITYWITHOUTNOTICE INTERNAL SCHEMATIC DIAGRAM Drain Gate Source

1 2

3 TO-251

1 2

3 G D S TO-251 TYPE MARKING PACKAGE PACKING PJU1N60 U1N60 TO-251 80PCS/TUBE PARAMETER Symbol PJU1N60 Units Drain-Source Voltage VDS

600 V Gate-Source Voltage VGS +30 V Continuous Drain Current ID

1 A Pulsed Drain Current 1) IDM 4.6 A Maximum Power Dissipation Derating Factor TA =25O C PD

28 0.22 W Operating Junction and Storage Temperature Range TJ ,TSTG -55 to +150 O C Avalanche Energy with Single Pulse IAS =1.1A, VDD=50V, L=95mH EAS

58 mJ Junction-to-Case Thermal Resistance RθJC 4.5 O C/W Junction-to Ambient Thermal Resistance RθJA

100 O C/W PAGE .

2 PJU1N60 ELECTRICAL CHARACTERISTICS ( TA =25O C unless otherwise noted ) NOTE : Plus Test: Pluse Width < 300us, Duty Cycle < 2%. Parameter Symbol Test Condition Min. Typ. Max. Units Static Drain-Source Breakdown Voltag e BVDSS VGS =0V, I D =250uA

600 - - V Gate Threshold Voltage VGS(th) VDS =VGS , I D =250uA 2.0 - 4.0 V Drain-Source On-State Resistance RDS(on) VGS = 10V, I D = 0.5A - 8.3

11 ? Zero Gate Voltage Drain Current I DSS VDS =600V, VGS =0V - -

10 uA Gate Body Leakage I GSS VGS =+30V, VDS =0V - - +100 nΑ Dynamic Total Gate Charge Qg VDS =480V, ID =1.0A VGS =10V - 6.2 7.8 nC Gate-Source Charge Q gs - 1.44 - Gate-Drain Charge Q gd - 3.32 - Turn-On Delay Time t d(on) VDD =300V, ID =1.0A RG =25?, VGS =10V - 10.2 14.8 ns Turn-On Rise Time t r - 5.6 8.0 Turn-Off Delay Time t d(off) -

16 22 Turn-Off Fall Time t f - 10.2

16 Input Capacitance C iss VDS =25V, VGS =0V f=1.0MHZ -

165 220 pF Output Capacitance C oss -

17 28 Reverse Transfer Capacitance C rss - 1.65 4.2 Source-Drain Diode Max. Diode Forward Current I S - - - 1.0 A Max.Pulsed Source Current I SM - - - 4.6 A Diode Forward Voltage VSD IS =1A , VGS =0V - - 1.5 V Reverse Recovery Time t rr VGS =0V, IF =1A di/dt=100A/us -

190 - ns Reverse Recovery Charge Q rr - 0.5 - uC April 12,2010-REV.00 Fig.1 Output Characteristric PJU1N60 Typical Characteristics Curves ( Ta=25℃ ℃ ℃ ℃, unless otherwise noted) Fig.2 Transfer Characteristric

0 0.2 0.4 0.6 0.8

1 1.2 1.4 1.6 1.8

2 0

5 10

15 20

25 30 I D - Drain-to-Source Current (A) VDS - Drain-to-Source Voltage (V) VGS= 20V~ 7.0V 5.0V 6.0V

0 5

10 15

20 25

30 35

0 0.5

1 1.5

2 2.5

3 R DS(ON) - On Resistance( ? ? ? ? ) ID - Drain Current (A) VGS = 20V VGS=10V

0 5

10 15

20 25

30 3

4 5

6 7

8 9

10 R DS(ON) - On Resistance( ? ? ? ? ) VGS - Gate-to-Source Voltage (V) ID =1A TJ =25oC 0.01 0.1

1 10

2 3

4 5

6 7

8 I D - Drain Source Current (A) VGS - Gate-to-Source Voltage (V) VDS =40V TJ = 125oC 25oC -55oC ` Fig.1 Output Characteristric PJU1N60 Typical Characteristics Curves ( Ta=25℃ ℃ ℃ ℃, unless otherwise noted) Fig.2 Transfer Characteristric Fig.3 On Resistance vs Drain Current Fig.4 On Resistance vs Gate to Source Voltage Fig.5 On Resistance vs Junction Temperature Fig.6 Capacitance PAGE.