PDF《PBSS5350D》

1.

Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits ? Low collector-emitter saturation voltage VCEsat ? High current capability ? High efficiency due to less heat generation ? AEC-Q101 qualified ? Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications ? Supply line switching circuits ? Battery management applications ? DC-to-DC conversion 1.4 Quick reference data PBSS5350D

50 V,

3 A PNP low VCEsat (BISS) transistor Rev.

6 ―

28 June

2011 Product data sheet S O T

4 5

7 Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -50 V IC collector current - - -3 A ICM peak collector current - - -5 A RCEsat collector-emitter saturation resistance IC = -2 A;

IB = -200 mA;

pulsed;

tp ≤

300 ?s;

δ ≤ 0.02 ;

Tamb =

25 °C -

120 150 m? PBSS5350D All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

6 ―

28 June

2011 2 of

12 NXP Semiconductors PBSS5350D

50 V,

3 A PNP low VCEsat (BISS) transistor 2. Pinning information 3. Ordering information 4. Marking Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol

1 C collector SOT457 (TSOP6)

2 C collector

3 B base

4 E emitter

5 C collector

6 C collector

1 3

2 4

5 6

4 3 1, 2, 5,

6 sym030 Table 3. Ordering information Type number Package Name Description Version PBSS5350D TSOP6 plastic surface-mounted package (TSOP6);

6 leads SOT457 Table 4. Marking codes Type number Marking code PBSS5350D

53 PBSS5350D All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.

6 ―

28 June

2011 3 of

12 NXP Semiconductors PBSS5350D

50 V,

3 A PNP low VCEsat (BISS) transistor 5. Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for collector

1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector

6 cm2. [3] Device mounted on an FR4 4-layer PCB. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector

1 cm2. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector

6 cm2. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -60 V VCEO collector-emitter voltage open base - -50 V VEBO emitter-base voltage open collector - -6 V IC collector current - -3 A ICM peak collector current - -5 A IBM peak base current - -1 A Ptot total power dissipation Tamb ≤

25 °C [1] -

600 mW [2] -

750 mW [3] -

1200 mW Tj junction temperature -

150 °C Tamb ambient temperature -65

150 °C Tstg storage temperature -65

150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - -

208 K/W [2] - -

160 K/W pulsed;

tp ≤

50 ms;

δ ≤ 0.5.;

in free air [2] - -

100 K/W PBSS5350D All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2011. All rights reserved. Product data sheet Rev.