PDF《SiHF5N50D》

SiHF5N50D www.

vishay.com Vishay Siliconix S16-1602-Rev. C, 15-Aug-16

1 Document Number:

91491 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 D Series Power MOSFET FEATURES ? Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness - Avalanche energy rated (UIS) ? Optimal efficiency and operation - Low cost - Simple gate drive circuitry - Low figure-of-merit (FOM): Ron x Qg - Fast switching ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS ? Consumer electronics - Displays (LCD or plasma TV) ? Server and telecom power supplies - SMPS ? Industrial - Welding - Induction heating - Motor drives ? Battery chargers Notes a. Repetitive rating;

pulse width limited by maximum junction temperature. b. VDD =

50 V, starting TJ =

25 °C, L = 2.3 mH, Rg =

25 ?, IAS =

5 A. c. 1.6 mm from case. d. ISD ? ID, starting TJ =

25 °C. e. Limited by maximum junction temperature. PRODUCT SUMMARY VDS (V) at TJ max.

550 RDS(on) max. (?) at

25 °C VGS =

10 V 1.5 Qg max. (nC)

20 Qgs (nC)

3 Qgd (nC)

5 Configuration Single N-Channel MOSFET G D S S D G TO-220 FULLPAK ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free SiHF5N50D-E3 ABSOLUTE MAXIMUM RATINGS (TC =

25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS

500 V Gate-Source Voltage VGS ±

30 Gate-Source Voltage AC (f >

1 Hz)

30 Continuous Drain Current (TJ =

150 °C) e VGS at

10 V TC =

25 °C ID 5.3 A TC =

100 °C 3.4 Pulsed Drain Current a IDM

10 Linear Derating Factor 0.24 W/°C Single Pulse Avalanche Energy b EAS

23 mJ Maximum Power Dissipation PD 28.8 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C Drain-Source Voltage Slope TJ =

125 °C dV/dt

24 V/ns Reverse Diode dV/dt d 0.28 Soldering Recommendations (Peak temperature) c For

10 s

300 °C Mounting Torque M3 screw 0.6 Nm SiHF5N50D www.vishay.com Vishay Siliconix S16-1602-Rev. C, 15-Aug-16

2 Document Number:

91491 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note a. Repetitive rating;

pulse width limited by maximum junction temperature. b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from

0 % to

80 % VDSS. c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from

0 % to

80 % VDSS. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -

65 °C/W Maximum Junction-to-Case (Drain) RthJC - 4.1 SPECIFICATIONS (TJ =

25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS =

0 V, ID =

250 μA

500 - - V VDS Temperature Coefficient ?VDS/TJ Reference to

25 °C, ID =

250 μA - 0.58 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID =

250 μA

3 -

5 V Gate-Source Leakage IGSS VGS = ±

30 V - - ±

100 nA Zero Gate Voltage Drain Current IDSS VDS =

500 V, VGS =

0 V - -

1 μA VDS =

400 V, VGS =

0 V, TJ =

125 °C - -

10 Drain-Source On-State Resistance RDS(on) VGS =