PDF《SPW24N60C3》

2008-02-11 Rev.

2.5 Page

1 SPW24N60C3 Cool MOS? Power Transistor VDS @ Tjmax

650 V RDS(on) 0.16 ? ID 24.3 A Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance PG-TO247 Type Package Ordering Code SPW24N60C3 PG-TO247 Q67040-S4640 Marking 24N60C3 Maximum Ratings Parameter Symbol Value Unit Continuous drain current TC =

25 °C TC =

100 °C ID 24.3 15.4 A Pulsed drain current, tp limited by Tjmax ID puls 72.9 Avalanche energy, single pulse ID =

10 A, VDD =

50 V EAS

780 mJ Avalanche energy, repetitive tAR limited by Tjmax 1) ID = 24.3 A, VDD =

50 V EAR

1 Avalanche current, repetitive tAR limited by Tjmax IAR 24.3 A Gate source voltage static VGS ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot

240 W Operating and storage temperature Tj , Tstg -55... +150 °C Reverse diode dv/dt dv/dt

15 V/ns 4) 2008-02-11 Rev. 2.5 Page

2 SPW24N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS =

480 , ID = 24.3 , Tj =

125 °C dv/dt

50 V/ns Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Thermal resistance, junction - case RthJC - - 0.52 K/W Thermal resistance, junction - ambient, leaded RthJA - -

62 Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s Tsold - -

260 °C Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

600 - - V Drain-Source avalanche breakdown voltage V(BR)DS VGS=0V, ID=24.3A -

700 - Gate threshold voltage VGS(th) ID=1200?Α, VGS=VDS 2.1

3 3.9 Zero gate voltage drain current IDSS VDS=600V, VGS=0V, Tj=25°C, Tj=150°C - - 0.1 -

1 100 ?A Gate-source leakage current IGSS VGS=20, VDS=0V - -

100 nA Drain-source on-state resistance RDS(on) VGS=10V, ID=15.4A, Tj=25°C Tj=150°C - - 0.14 0.34 0.16 - ? Gate input resistance RG f=1MHz, open Drain - 0.66 - 2008-02-11 Rev. 2.5 Page

3 SPW24N60C3 Electrical Characteristics , at Tj =

25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Transconductance gfs VDS≥2*ID*RDS(on)max, ID=15.4A - 21.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz -

3000 - pF Output capacitance Coss -

1000 - Reverse transfer capacitance Crss -

60 - Effective output capacitance,2) energy related Co(er) VGS=0V, VDS=0V to 480V -

141 - pF Effective output capacitance,3) time related Co(tr) -

224 - Turn-on delay time td(on) VDD=380V, VGS=0/10V, ID=24.3A, RG=3.3 -

13 - ns Rise time tr VDD=380V, VGS=0/10V, ID=24.3A, RG=3.3? -

21 - Turn-off delay time td(off) -

140 - Fall time tf -

14 - Gate Charge Characteristics Gate to source charge Qgs VDD=480, ID=24.3A - 12.7 - nC Gate to drain charge Qgd - 45.8 - Gate charge total Qg VDD=480V, ID=24.3A, VGS=0 to 10V - 104.9

135 Gate plateau voltage V(plateau) VDD=480V, ID=24.3A -

5 - V 1Repetitve avalanche causes additional power losses that can be calculated asPAV=EAR*f. 2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from

0 to 80% VDSS. 3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from

0 to 80% VDSS. 4ISD