PDF《IRF7103QPbF》

HEXFET? Power MOSFET Description This HEXFET? Power MOSFET'

s in a Dual SO-8 package utilizethelastestprocessingtechniquestoachieveextremely low on-resistance per silicon area.

Additional features of these HEXFET Power MOSFET'

s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape &

Reel. 08/02/10 www.irf.com

1 Benefits l Advanced Process Technology l Dual N-Channel MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature l Repetitive Avalanche Allowed up to Tjmax l Lead-Free IRF7103QPbF VDSS RDS(on) max (mW) ID 50V 130@VGS = 10V 3.0A 200@VGS = 4.5V 1.5A D1 D1 D2 D2 G1 S2 G2 S1 Top View

8 1

2 3

4 5

6 7 SO-8 Absolute Maximum Ratings Parameter Units ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation e W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy f mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ dv/dt Peak Diode Recovery dv/dt g V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead CCC

20 °C/W RθJA Junction-to-Ambient fg CCC 62.5 -55 to +

175 2.4

16 12 See Fig. 16c, 16d, 19,

20 ±

20 22 Max. 3.0 2.5

25 PD - 96101C IRF7103QPbF

2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) ? p-n junction diode. VSD Diode Forward Voltage CCC CCC 1.2 V TJ = 25°C, IS = 1.5A, VGS = 0V ? trr Reverse Recovery Time CCC

35 53 ns TJ = 25°C, IF = 1.5A Qrr Reverse Recovery Charge CCC

45 67 nC di/dt = 100A/?s ? Source-Drain Ratings and Characteristics A

12 ??? ??? ??? 3.0 ??? Notes: ? Repetitive rating;

pulse width limited by max. junction temperature. ? Pulse width ≤ 400?s;

duty cycle ≤ 2%. ? Surface mounted on

1 in square Cu board ? Starting TJ = 25°C, L = 4.9mH RG = 25?, IAS = 3.0A. (See Figure 12). ? ISD ≤ 2.0A, di/dt ≤ 155A/?s, VDD ≤ V(BR)DSS, TJ ≤ 175°C ? Limited by TJmax , see Fig.16c, 16d, 19,

20 for typical repetitive avalanche performance. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage

50 CCC CCC V VGS = 0V, ID = 250?A ?V(BR)DSS/?TJ Breakdown Voltage Temp. Coefficient CCC 0.057 CCC V/°C Reference to 25°C, ID = 1mA CCC CCC

130 VGS = 10V, ID = 3.0A ? CCC CCC

200 VGS = 4.5V, ID = 1.5A ? VGS(th) Gate Threshold Voltage 1.0 CCC 3.0 V VDS = VGS, ID = 250?A gfs Forward Transconductance 3.4 CCC CCC S VDS = 15V, ID = 3.0A CCC CCC 2.0 VDS = 40V, VGS = 0V CCC CCC

25 VDS = 40V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage CCC CCC

100 VGS = 20V Gate-to-Source Reverse Leakage

100 VGS = -20V Qg Total Gate Charge CCC

10 15 ID = 2.0A Qgs Gate-to-Source Charge CCC 1.2 CCC nC VDS = 40V Qgd Gate-to-Drain ( Miller ) Charge CCC 2.8 CCC VGS = 10V td(on) Turn-On Delay Time CCC 5.1 CCC VDD = 25V ? tr Rise Time CCC 1.7 CCC ID = 1.0A td(off) Turn-Off Delay Time CCC

15 CCC RG = 6.0? tf Fall Time CCC 2.3 CCC RD = 25? Ciss Input Capacitance CCC