PDF《PMV30ENEA》

102 10

1 102 ID (A) 10-2 10-1

1 10 DC;

Tsp =

25 °C DC;

Tamb =

25 °C;

6 cm2 tp =

10 ?s

100 ?s

1 ms

10 ms

100 ms Limit RDSon = VDS/ID IDM = single pulse Fig. 3. Safe operating area;

junction to ambient;

continuous and peak drain currents as a function of drain- source voltage PMV30ENEA All information provided in this document is subject to legal disclaimers. ? Nexperia B.V. 2019. All rights reserved Product data sheet

2 April

2019 4 /

14 Nexperia PMV30ENEA

40 V N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] -

175 210 K/W Rth(j-a) thermal resistance from junction to ambient in free air [2] -

95 115 K/W Rth(j-sp) thermal resistance from junction to solder point -

13 18 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain

6 cm

2 . aaa-029752 tp (s) 10-3

103 102

10 1 10-1 10-2

103 Zth(j-a) (K/W)

1 10

102 duty cycle =

1 0.02 0.01

0 0.05 0.1 0.2 0.25 0.33 0.5 0.75 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values aaa-029753 tp (s) 10-3

103 102

10 1 10-1 10-2

103 Zth(j-a) (K/W)

1 duty cycle =

1 0.02 0.01

0 0.75 0.5 0.33 0.25 0.1 0.05 0.2

10 102 FR4 PCB, mounting pad for drain

6 cm

2 Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values PMV30ENEA All information provided in this document is subject to legal disclaimers. ? Nexperia B.V. 2019. All rights reserved Product data sheet

2 April

2019 5 /

14 Nexperia PMV30ENEA

40 V N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =

250 ?A;

VGS =

0 V;

Tj =

25 °C

40 - - V VGSth gate-source threshold voltage ID =

250 ?A;

VDS=VGS;

Tj =

25 °C

1 1.6 2.5 V IDSS drain leakage current VDS =

40 V;

VGS =

0 V;

Tj =

25 °C - -

1 ?A VGS =

20 V;

VDS =

0 V;

Tj =

25 °C - -

10 ?A VGS = -20 V;

VDS =

0 V;

Tj =

25 °C - - -10 ?A VGS =

10 V;

VDS =

0 V;

Tj =

25 °C - -

2 ?A IGSS gate leakage current VGS = -10 V;

VDS =

0 V;

Tj =

25 °C - - -2 ?A VGS =

10 V;

ID = 4.8 A;

Tj =

25 °C -

23 30 mΩ VGS =

10 V;

ID = 4.8 A;

Tj =

175 °C -

44 57 mΩ RDSon drain-source on-state resistance VGS = 4.5 V;

ID = 4.1 A;

Tj =

25 °C -

30 40 mΩ gfs forward transconductance VDS =

10 V;

ID =

3 A;

Tj =

25 °C -

19 - S RG gate resistance f =

1 MHz -

2 - Ω Dynamic characteristics QG(tot) total gate charge - 7.8 11.7 nC QGS gate-source charge - 1.2 - nC QGD gate-drain charge VDS =

20 V;

ID = 4.8 A;

VGS =

10 V;

Tj =

25 °C - 1.6 - nC Ciss input capacitance -

440 - pF Coss output capacitance -

76 - pF Crss reverse transfer capacitance VDS =

20 V;

f =

1 MHz;

VGS =

0 V;

Tj =

25 °C -

39 - pF td(on) turn-on delay time -

4 - ns tr rise time -

2 - ns td(off) turn-off delay time -

20 - ns tf fall time VDS =

20 V;

ID = 4.8 A;

VGS =

10 V;

RG(ext) =

6 Ω;

Tj =

25 °C -

33 - ns Source-drain diode VSD source-drain voltage IS = 1.3 A;

VGS =

0 V;

Tj =

25 °C - 0.8 1.2 V trr reverse recovery time -