PDF《IRF9Z30, SiHF9Z30》

IRF9Z30, SiHF9Z30 www.

vishay.com Vishay Siliconix S12-3048-Rev. A, 24-Dec-12

1 Document Number:

91459 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET FEATURES ? P-Channel Versatility ? Compact Plastic Package ? Fast Switching ? Low Drive Current ? Ease of Paralleling ? Excellent Temperature Stability ? Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note? * Lead (Pb)-containing terminations are not RoHS-compliant.? Exemptions may apply. DESCRIPTION The power MOSFET technology is the key to Vishay'

s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The p-channel power MOSFET'

s are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common n-channel Power MOSFET'

s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. P-channel power MOSFETs are intended for use in power stages where complementary symmetry with n-channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. Notes a. Repetitive rating;

pulse width limited by maximum junction temperature (see fig. 14). b. VDD = -

25 V, starting TJ =

25 °C, L =100 μH, Rg =

25 ? c. 0.063 (1.6 mm) from case. PRODUCT SUMMARY VDS (V) -

50 RDS(on) (?) VGS = -

10 V 0.14 Qg (Max.) (nC)

39 Qgs (nC)

10 Qgd (nC)

15 Configuration Single S G D P-Channel MOSFET TO-220AB G D S ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRF9Z30PbF SiHF9Z30-E3 SnPb IRF9Z30 SiHF9Z30 ABSOLUTE MAXIMUM RATINGS (TC =

25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -

50 V Gate-Source Voltage VGS ±

20 Continuous Drain Current VGS at -

10 V TC =

25 °C ID -

18 A TC =

100 °C -

11 Pulsed Drain Currenta IDM -

60 Linear Derating Factor 0.59 W/°C Inductive Current, Clamped L =

100 μH ILM -

60 A Unclamped Inductive Current (Avalanche Current) IL - 3.1 A Maximum Power Dissipation TC =

25 °C PD

74 W Operating Junction and Storage Temperature Range TJ, Tstg -

55 to +

150 °C Soldering Recommendations (Peak Temperature) for

10 s 300c IRF9Z30, SiHF9Z30 www.vishay.com Vishay Siliconix S12-3048-Rev. A, 24-Dec-12

2 Document Number:

91459 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes a. Repetitive rating;

pulse width limited by maximum junction temperature (see fig. 14). b. Pulse width ?

300 μs;

duty cycle ?

2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -

80 °C/W Maximum Junction-to-Case (Drain) RthJC - 1.7 SPECIFICATIONS (TJ =

25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS =

0 V, ID = -

250 μA -