PDF《SPN3400》

2009/07/05 Ver.

3 Page

1 SPN3400 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES PIN CONFIGURATION(SOT-23-3L) PART MARKING ? 30V/5.4A,RDS(ON)= 38m?@VGS=10V ? 30V/4.6A,RDS(ON)= 42m?@VGS=4.5V ? 30V/3.8A,RDS(ON)= 55m?@VGS=2.5V ? Super high density cell design for extremely low RDS (ON) ? Exceptional on-resistance and maximum DC current capability ? SOT-23-3L package design 2009/07/05 Ver.3 Page

2 SPN3400 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description

1 G Gate

2 S Source

3 D Drain ORDERING INFORMATION Part Number Package Part Marking SPN3400S23RG SOT-23-3L A0YW SPN3400S23RGB SOT-23-3L A0YW Week Code : A ~ Z(

1 ~

26 ) ;

a ~ z(

27 ~

52 ) SPN3400S23RG : Tape Reel ;

Pb C Free SPN3400S23RGB : Tape Reel ;

Pb C Free ;

Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25 Unless otherwise ℃ noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS

30 V Gate CSource Voltage VGSS ±12 V TA=25℃ 4.5 Continuous Drain Current(TJ=150 ) ℃ TA=70℃ ID 3.5 A Pulsed Drain Current IDM

25 A Continuous Source Current(Diode Conduction) IS 1.7 A TA=25℃ 2.0 Power Dissipation TA=70℃ PD 1.3 W Operating Junction Temperature TJ

150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA

90 /W ℃ 2009/07/05 Ver.3 Page

3 SPN3400 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) ℃ Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA

30 Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA 0.8 1.6 V Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 nA VDS=24V,VGS=1.0V

1 Zero Gate Voltage Drain Current IDSS VDS=24V,VGS=0.0V TJ=55℃

10 uA On-State Drain Current ID(on) VDSR4.5V,VGS=4.5V

10 A VGS = 10V,ID=5.4A 0.030 0.038 VGS =4.5V,ID=4.6A 0.034 0.042 Drain-Source On-Resistance RDS(on) VGS =2.5V,ID=3.8A 0.040 0.055 ? Forward Transconductance gfs VDS=4.5V,ID=5.4A

12 S Diode Forward Voltage VSD IS=1.7A,VGS=0V 0.8 1.2 V Dynamic Total Gate Charge Qg

10 18 Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd VDS=15VGS=10V ID≡6.7A 3.2 nC Input Capacitance Ciss

450 Output Capacitance Coss

240 Reverse Transfer Capacitance Crss VDS=15VGS=0V f=1MHz

38 pF td(on)

7 15 Turn-On Time tr

10 20 td(off)

20 40 Turn-Off Time tf VDD=15RL=15 ID≡1.0A,VGEN=10 RG=6?

11 20 ns 2009/07/05 Ver.3 Page

4 SPN3400 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/07/05 Ver.3 Page

5 SPN3400 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/07/05 Ver.3 Page

6 SPN3400 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/07/05 Ver.3 Page

7 SPN3400 N-Channel Enhancement Mode MOSFET SOT-23-3L PACKAGE OUTLINE 2009/07/05 Ver.3 Page

8 SPN3400 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ?The SYNC Power logo is a registered trademark of SYNC Power Corporation ?2004 SYNC Power Corporation C Printed in Taiwan C All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan, 115, R.O.C Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ?http://www.syncpower.com