PDF《BRCS80N07BD》

BRCS80N07BD Rev.

B May.-2019 DATA SHEET http://www.fsbrec.com

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8 N 沟道 TO-263 塑封封装场效应管. N-CHANNEL MOSFET in a TO-263 Plastic Package. RDS(on)小,栅极电荷低,快速开关特性,无卤产品. Low RDS(on),Low Gate Charge, Fast Switching,Halogen-free Product. 用于 AC-DC 开关电源,DC-DC 电源转换器,高压 H 桥PWM 马达驱动. Suited for AD-DC Power switch,DC-DC Power converter,High Voltage H-Bridge PWM Motor Drive. PIN1:G PIN

2、4:D PIN 3:S 放大及印章代码 / hFE Classifications & Marking 见印章说明.See Marking Instructions. 描述 / Descriptions 特征 / Features 用途 / Applications 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning

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1 4 BRCS80N07BD Rev.B May.-2019 DATA SHEET http://www.fsbrec.com

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8 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Drain-Source Voltage VDSS

70 V Drain CurrentG ID(Tc=25℃)

80 A ID(Tc=100℃)

62 A Drain Current - PulsedC IDM

308 A Gate-Source Voltage VGS ±20 V Single Pulsed Avalanche Energy(L=0.5mH) EAS

350 mJ Avalanche Current IAS

30 A Power DissipationB PD(Tc=25℃)

175 W PD(Tc=100℃)

67 W Operating and Storage Temperature Range TJ,TSTG -55 to

150 ℃ Maximum Junction-to-AmbientA Steady-State RθJA

62 /W ℃ Maximum Junction-to-CaseB Steady-State RθJC 0.7 /W ℃ 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA

70 V Zero Gate Voltage Drain Current IDSS VDS=70V VGS=0V

1 μA VDS=70V TJ=55℃

5 Gate-Body Leakage Current Forward IGSS VGS=±20V VDS=0V

100 nA Gate Threshold Voltage VGS(th) VDS=VGS ID=250μA 2.0 2.8 4.0 V Total gate charge RDS(on) VGS=10V ID=35A 5.8

7 m? Drain-Source Diode Forward Voltage VSD VGS=0V IS=1A 1.4 V 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) BRCS80N07BD Rev.B May.-2019 DATA SHEET http://www.fsbrec.com

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8 参数 Parameter 符号 Symbol 测试条件 Test Conditions 最小值 Min 典型值 Typ 最大值 Max 单位 Unit Gate resistance Rg VGS=0V VDS=0V f=1MHz 1.25 ? Input Capacitance Ciss VDS=30V VGS=0V f=1.0MHz

2180 pF Output Capacitance Coss

614 pF Reverse Transfer Capacitance Crss

110 pF Total Gate Charge(10V) Qg VGS=10V VDS=30V ID=20A

53 75 nC Total Gate Charge(4.5V) Qg

22 31 nC Gate Source Charge Qgs

17 31 nC Gate Drain Charge Qgd

5 nC Turn-On Delay Time td(on) VGS=10V VDS=30V RL=1.5? RGEN=3?

18 ns Turn-On Rise Time tr

20 ns Turn-Off Delay Time td(off)

33 ns Turn-Off Fall Time tf

4 ns Body Diode Reverse Recovery Time trr IF=20A dI/dt=500A/μs

26 ns Body Diode Reverse Recovery Charge Qrr IF=20A dI/dt=500A/μs

125 nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures

1 to

6 are obtained using