编辑: lonven 2015-12-18
ESD PROTECTION DIODE Discription The is designed to protect voltage sensitive components from ESD.

Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space is at a premium. Applications l Cellular phones audio l MP3 players l Digital cameras l Portable applicationss l mobile telephone Features l Small Body Outline Dimensions: 0.039″ x 0.024″(1.0 mm x 0.60 mm) l Low Body Height: 0.020″ (0.50 mm) l Stand?off Voltage: 3.3 V ?

12 V l Low Leakage l Response Time is Typically <

1 ns l ESD Rating of Class

3 (>

16 kV) per Human Body Model l IEC61000?4?2 Level

4 ESD Protection l These are Pb?Free Devices MAXIMUM RATINGS Rating Symbol Value Unit IEC 61000-4-2 (ESD) ±15 kV ESD Voltage Per Human Body Model

16 kV Total Power Dissipation on FR-5 Board (Note 1) @ TA=25℃ PD

150 mW Junction and Storage Temperature Range TJ,TSTG -55 to

150 ℃ Lead Solder Temperature C Maximum (10 Second Duration) TL

260 ℃ Stresses exceeding Maximum Ratings may damage the device. Maximum Rating are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0*0.75*0.62 in. LESD8D5.0T5G LESHAN RADIO COMPANY, LTD. We declare that the material of product compliance with RoHS requirements. l LESD8D5.0T5G discharge Contact discharge ±8 kV Air Ordering information Device Marking Shipping CATHODE ANODE Rev.D 1/4 SOD882

1 2 LESD8D5.0T5G LESD8D5.0T5G G 10000/Tape&Reel ELECTRICAL CHARACTERISTICS VRWM (V) IR (μA) @ VRWM VBR (V) @ IT (Note 2) IT (mA) IPP (A) (Note 3) VC (V) @ Max IPP (Note 3) PPK (W) (8*20 μs) C (pF) Device Max Max Min Max Max Typ Typ 5.0 1.0 6.2 1.0 8.7 12.3

107 65 Other voltage available upon request. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25℃ 3. Surge current waveform per Figure 3. LESHAN RADIO COMPANY, LTD. LESD8D5.0T5G Rev.D 2/4 LESD8D5.0T5G TYPICAL CHARACTERISTICS Figure 1. Typical Breakdown Voltage Fig 2. Typical Leakage Current versus versus Temperature Temperature Figure 3. 8*20 μs Pulse Waveform Figure 5. Positive 8kV contact per IEC Fig 6. Negative 8kV contact per IEC 61000-4-2-LESD8D5.0T5G 61000-4-2-LESD8D5.0T5G LESHAN RADIO COMPANY, LTD.

2 3

4 5

6 7

8 9

10 11

12 13

0 5

10 15

20 Peak Pulse Current - IPP (A) Clamping Voltage - V C (V) Waveform Parameters: tr = 8?s td = 20?s Normalized Junction Capacitance Voltage vs. Reverse Voltage Fig 4. Rev.D 3/4 LESD8D5.0T5G LESHAN RADIO COMPANY, LTD. Rev.D 4/4 OUTLINE AND DIMENSIONS SOLDERING FOOTPRINT LESD8D5.0T5G

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