PDF《The RF Line》

1 MRF8372R1, R2 MOTOROLA RF DEVICE DATA The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in

800 MHz and UHF frequency ranges.

? Specified @ 12.5 V,

870 MHz Characteristics Output Power =

750 mW Minimum Gain = 8.0 dB Efficiency 60% (Typ) ? StateCofCtheCArt Technology Fine Line Geometry Gold Top Metal and Wires Silicon Nitride Passivated Ion Implanted Arsenic Emitters ? Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. ? Order MRF8372 in tape and reel packaging by adding suffix: R1 suffix =

500 units per reel R2 suffix = 2,500 units per reel MAXIMUM RATINGS Rating Symbol Value Unit CollectorCEmitter Voltage VCEO

16 Vdc CollectorCBase Voltage VCBO

36 Vdc EmitterCBase Voltage VEBO 4.0 Vdc Collector Current ― Continuous IC

200 mAdc Total Device Dissipation @ TC = 75°C (1) Derate above 75°C PD 1.67 22.2 Watts mW/°C Storage Temperature Range TJ, Tstg C55 to +150 °C Maximum Junction Temperature TJmax

150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC

45 °C/W DEVICE MARKING MRF8372 =

8372 NOTE: 1. Case temperature measured on collector lead immediately adjacent to body of package. Order this document by MRF8372/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF8372R1, R2

750 mW,

870 MHz RF LOW POWER TRANSISTOR NPN SILICON CASE 751C05, STYLE

1 SORF (SOC8) ? Motorola, Inc.

1997 (Replaces MRF837/D) MRF8372R1, R2

2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorCEmitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO

16 ― ― Vdc CollectorCEmitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES

36 ― ― Vdc EmitterCBase Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 4.0 ― ― Vdc Collector Cutoff Current (VCE =

15 Vdc, VBE = 0, TC = 25°C) ICES ― ― 0.1 mAdc ON CHARACTERISTICS DC Current Gain (IC =

50 mAdc, VCE =

10 Vdc) hFE

30 90

200 ― DYNAMIC CHARACTERISTICS Output Capacitance (VCB =

15 Vdc, IE = 0, f = 1.0 MHz) Cob ― 1.8 2.5 pF FUNCTIONAL TESTS CommonCEmitter Amplifier Power Gain (VCC = 12.5 Vdc, Pout = 0.75 W, f =

870 MHz) Gpe 8.0

10 ― dB Collector Efficiency (VCC = 12.5 Vdc, Pout = 0.75 W, f =

870 MHz) η

55 60 ― %

3 MRF8372R1, R2 MOTOROLA RF DEVICE DATA Figure 1. 800C900 MHz Broadband Circuit C1, C5 ― 0.8C8.0 pF Johanson Gigatrim C2, C3 ―

10 pF Ceramic Chip Capacitor C6 ―

91 pF Clamped Mica, MiniCUnderwood C4 ―

47 pF Ceramic Chip Capacitor C7 ―

91 pF Clamped Mica, MiniCUnderwood C8 ― 1.0 ?F

25 V Tantalum B ― Bead, Ferroxcube 56C590C65/3B L1, L2 ―

4 Turns, #21 AWG, 5/32″ ID L3 ―

7 Turns, #21 AWG, 5/32″ ID Z1, Z2 ― 1″ x 0.078″ Microstrip, Zo =

50 Ohms Z3 ― 0.25″ x 0.078″ Microstrip, Zo =

50 Ohms Z4 ― 0.15″ x 0.078″ Microstrip, Zo =

50 Ohms Z5 ― 0.30″ x 0.078″ Microstrip, Zo =

50 Ohms Z6 ― 1.63″ x 0.078″ Microstrip, Zo =

50 Ohms PCB ― 1/32″ Glass Teflon, εr = 2.56 L3 Z6 Z5 Z1 Z2 Z3 Z4 DUT C4 C1 C2 C3 L1 L2 C6 C7 C8 C5 B VCC + C B + 800/900 MHz BAND DATA Figure 2. Typical Broadband Performance

12 10

8 6

4 2

820 840

860 880

900 800 f, FREQUENCY (MHz)

70 60

50 10

15 20

25 EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) Pout =

750 mW VCC = 12.5 Vdc GPE ηc IRL G PE , GAIN (dB) c η , COLLECTOR MRF8372R1, R2

4 MOTOROLA RF DEVICE DATA f Zin Ohms ZOL* Ohms f VCC = 7.5 V VCC = 12.5 V VCC = 7.5 V VCC = 12.5 V f Frequency MHz Pin =