PDF《SYNCHRONOUS DRAM》

128Mb: x4, x8, x16 SDRAM 3.

3V PDF: 09005aef807827f6 / Source: 09005aef807825bd 128Mb SDRAM Rev: 11/29/2004

1 www.spectek.com SpecTek reserves the right to change products or specifications without notice. ? 2001, 2002,

2004 SpecTek SYNCHRONOUS DRAM Features: ? Intel PC-100 (3-3-3) or PC133 (3-3-3) compatible ? Fully synchronous;

all signals registered on positive edge of system clock ? Internal pipelined operation;

column address can be changed every clock cycle ? Internal banks for hiding row access precharge time ? Programmable burst lengths: 1, 2, or

4 using Interleaved Burst Addressing ? Auto Precharge and Auto Refresh modes ? 64ms, 4,096-cycle refresh quad-row refresh, (15.6?s/row) ? Self Refresh mode

1 ? LVTTL-compatible inputs and outputs ? Single +3.3V ±0.3V power supply ? The x16 devices are optimized for both single and dual rank DIMM applications. The x8 devices are optimized for single rank DIMM applications. Options: Designation: Family: SpecTek Memory SAA Configuration:

32 Meg x

4 (8 Meg x

4 x

4 banks) 32M4

16 Meg x

8 (4 Meg x

8 x

4 banks) 16M8

8 Meg x

16 (2 Meg x

16 x

4 banks) 8M16 Design ID SDRAM

128 Megabit Design Yx5x (Call SpecTek Sales for details on availability of x placeholders) Voltage and Refresh: 3.3V, Auto Refresh, 4K refresh L4 3.3V, Self or Auto Refresh1 , 4K refresh M4 Package Types: 54-pin plastic TSOP (400 mil) TK 60-ball FBGA (8mm x 16mm) FB2 60-ball FBGA (11mm x 13mm) FC2 Timing Types: PC100 (3-3-3) -8A PC133 (3-3-3) -75A Part number example: SAA16M8Y95AL4TK-75A (For part numbers prior to December 2004, refer to page

9 for decoding.) NOTES: 1. Only when specified. Consult Sales 2. Not available in x16 configuration General Description: The 128Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 134,217,728 bits. Each is internally configured as a quad-bank DRAM. Read and write accesses to the SDRAM are burst oriented;

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA0, BA1 select the bank;

A0-A11 select the row). The address bits registered 128Mb: x4, x8, x16 SDRAM 3.3V PDF: 09005aef807827f6 / Source: 09005aef807825bd 128Mb SDRAM Rev: 11/29/2004

2 www.spectek.com SpecTek reserves the right to change products or specifications without notice. ? 2001, 2002,

2004 SpecTek coincident with the READ or WRITE commands are used to select the starting column location for the burst access. The SDRAM provides for programmable READ or WRITE burst lengths of 1, 2, or

4 locations with burst terminate option using the Burst Interleaved Addressing mode only. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The 128Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a high-speed, fully random access. Precharging one bank while accessing one of the other three banks will hide the precharge cycles and provide seamless high-speed, random-access operation. The 128Mb SDRAM is designed to operate in 3.3V, low-power memory systems. An auto refresh mode is provided, along with a power-saving power-down mode. All inputs and outputs are LVTTL-compatible. SDRAMs offer substantial advances in DRAM operating performance, including the abilities to synchronously burst data at a high data rate with automatic column- address generation, to interleave between internal banks in order to hide precharge time, and to randomly change column addresses on each clock cycle during a burst access. The x8 devices are optimized for single bank DIMM applications. The x16 devices are available for both single and dual bank DIMM applications. Disclaimer: Except as specifically provided in this document, SpecTek makes no warranties, expressed or implied, including, but not limited to, any implied warranties of merchantability or fitness for a particular purpose. Any claim against SpecTek must be made within one year from the date of shipment from SpecTek, and SpecTek has no liability thereafter. Any liability is limited to replacement of the defective items or return of amounts paid for defective items (at buyer'